Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

被引：0
作者：
李亮 [1 ]
杨林安 [1 ]
周小伟 [1 ]
张进成 [1 ]
郝跃 [1 ]
机构：
[1] School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education,Xidian University
来源：
Chinese Physics B | 2013年 / 08期
基金：
中国国家自然科学基金;
关键词：
GaN terahertz Gunn diode; point defect; photoluminescence; capacitance–voltage;
D O I：
暂无
中图分类号：
TN31 [半导体二极管];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V ) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 10 11 cm 2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.
引用
收藏
页码：567 / 571
页数：5
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