Dirac-source field-effect transistors as energy-efficient,high-performance electronic switches

被引：0

作者：

机构：

来源：

Science Foundation in China | 2018年 / 03期

关键词：

FET; Dirac-source field-effect transistors as energy-efficient; high-performance electronic switches; CNT;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

With the support by the National Natural Science Foundation of China,the research team led by Prof.Peng LianMao(彭练矛)and Prof.Zhang ZhiYong(张志勇)at the Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing,recently reported Dirac-source field-effect transistors as energy-efficient,high-performance electronic switches,in Science(2018,361:387—392).

引用

页码：46 / 46

页数：1