A Flat-Gain Double-Pass Amplifier with New Hafnia-Bismuth-Erbium Codoped Fiber

被引:0
|
作者
Alabbas A.Al-Azzawi [1 ,2 ]
Aya A.Almukhtar [1 ,2 ]
P.H.Reddy [3 ,4 ]
D.Dutta [3 ]
S.Das [3 ]
A.Dhar [3 ]
M.C.Paul [3 ]
U.N.Zakaria [1 ]
S.W.Harun [1 ]
机构
[1] Photonics Engineering Laboratory, Department of Electrical Engineering, University of Malaya
[2] Department of Computer Techniques Engineering, Al-Esra'a University College
[3] Fiber Optics and Photonics Division, CSIR-Central Glass and Ceramic Research Institute
[4] Academy of Scientific and Innovative Research,CSIR-CGCRI Campus
关键词
length; A Flat-Gain Double-Pass Amplifier with New Hafnia-Bismuth-Erbium Codoped Fiber;
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中图分类号
TN722 [放大器];
学科分类号
摘要
An efficient and compact double-pass optical fiber amplifier is demonstrated using a newly developed hafnia bismuth erbium co-doped fiber(HBEDF) as a gain medium. The HBEDF is fabricated using a modified chemical vapor deposition in conjunction with solution doping. The fiber has an erbium ion concentration of 12500 ppm.At the optimum length of 0.5 m, the HBEDF amplifier(HBEDFA) achieves a flat gain of 26 d B with a gain variation of less than 1.5 d B within a wavelength region from 1530 to 1560 nm when the input signal and pump power are fixed at-30 d Bm and 140 m W, respectively. On the other hand, at the input signal power of-10 d Bm,the HBEDFA also achieves a flat gain of 14.2 d B with a gain variation of less than 2.5 d B within a wide wavelength region from 1525 to 1570 nm. Compared with the conventional zirconia erbium co-doped fiber based amplifier,the proposed HBEDFA obtains a more efficient gain and lower noise figure. For an input signal of-30 d Bm, the gain improvements of 6.2 d B and 4.8 d B are obtained at 1525 nm and 1540 nm, respectively.
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页码:61 / 64
页数:4
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