StructureandchemicalstatesofhighlyeptiaxialCeO2（001）filmsgrownonSrTiO3substratebylasermolecularbeamepitaxy

被引：0

作者：

张俊 ^{[1
]}

魏峰 ^{[1
]}

杨志民 ^{[1
]}

陈秋云 ^{[2
]}

陈军 ^{[2
]}

王书明 ^{[3
]}

机构：

[1] Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals

[2] Science and Technology on Surface Physics and Chemistry Laboratory

[3] National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Nonferrous Metals

来源：

Journal of Rare Earths | 2013年 / 31卷 / 12期

关键词：

laser molecular beam epitaxy; CeO2; thin film; oxygen vacancies; rare earths;

D O I：

暂无

中图分类号：

TN304.054 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Highly epitaxial and pure(001)-oriented CeO2films were grown on SrTiO3(001)substrates by laser molecular beam epitaxy method without any gas ambient.Layer-by-layer epitaxial growth mode of CeO2was confirmed by in situ reflection high-energy electron diffraction(RHEED)observations.High-resolution X-ray diffraction(HRXRD)and high-resolution transmission electron microscopy(HRTEM)results indicated the STO(100)//CeO2(100),STO[100]//CeO2[110]epitaxial relationship for out-of-plane and in-plane,respectively.The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model.Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3+and oxygen vacancies were presented.

引用

页码：1191 / 1194

页数：4

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