共 14 条
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[2]
Fabrication and characterization of Si/Si0. 7 Ge0. 3 quantum dots light emitting diodes. Tang Y S, Ni W X, Sotomayor Torres C M, et al. Electronics Letters . 1995
[3]
Island formation during growth of Ge on Si(100) : A study using photoluminescence spectroscopy. Sunamura H, Usami N, Shiraki Y. Applied Physics Letters . 1995
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Landolt-Brnstein: Numerical Data and Functional Relationships in Science and Technology. Hellwege, K -H,Madelung, O,Schulz, M. et al. Springer-Verlag . 1982
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Dislocation-free Stranski-Krastanow grwoth of Ge on Si(100). Eaglesham, D. J,Cerullo, M. Physical Review Letters . 1990
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Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials. Toshihide Takagahara, Kyozaburo Takeda. Physical Review B: Condensed Matter and Materials Physics . 1992
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Spectral blue shift of photoluminescence in strained-layer Si1-xGex/Si quantum well structure grown by gas-source Si molecular beam epitaxy. Fukatsu S, Yoshida H, Fujiwara A, et al. Applied Physics Letters . 1992
[8]
Photoluminescence and microstructure of self - ordered grown SiGe/Si quantum wires. Hartmann A, Dieker C, Loo R et al. Applied Physics Letters . 1995
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Near-band-gap photoluminescence of Si-Ge alloys. Weber J, Alonso M I. Physical Review B Condensed Matter and Materials Physics . 1989
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Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells. Sturn J C, Manoharan H, Lenchyshyn L C, et al. Physical Review Letters . 1991