Electroluminescence Orientation in InGaN/GaN LED on Nano-patterned Sapphire by MOCVD

被引:0
|
作者
谭天亚 [1 ]
TOHNO Mitsuaki [2 ]
MATSUMOTO Masakazu [2 ]
NAOI Yoshiki [2 ]
SAKAI Shiro [2 ]
机构
[1] Department of Physics, Liaoning University
[2] Graduate School of Advanced Technology and Science, Tokushima University
关键词
LED; nano-pattern; GaN; electroluminescence;
D O I
暂无
中图分类号
TB383.1 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional (3D) space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.
引用
收藏
页码:1137 / 1138
页数:2
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