Electroluminescence Orientation in InGaN/GaN LED on Nano-patterned Sapphire by MOCVD

被引：0

作者：

谭天亚 ^{[1
]}

TOHNO Mitsuaki ^{[2
]}

MATSUMOTO Masakazu ^{[2
]}

NAOI Yoshiki ^{[2
]}

SAKAI Shiro ^{[2
]}

机构：

[1] Department of Physics, Liaoning University

[2] Graduate School of Advanced Technology and Science, Tokushima University

来源：

JournalofWuhanUniversityofTechnology(MaterialsScienceEdition) | 2012年 / 27卷 / 06期

关键词：

LED; nano-pattern; GaN; electroluminescence;

D O I：

暂无

中图分类号：

TB383.1 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional (3D) space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.

引用

页码：1137 / 1138

页数：2

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