Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

被引：0
|
作者：
杨宏平 [1 ]
原文娟 [2 ]
罗俊 [2 ]
朱静 [1 ]
机构：
[1] National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, the State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials(MOE), Tsinghua University
[2] Center for Electron Microscopy, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering,Tianjin University of Technology
来源：
Chinese Physics B | 2019年 / 28卷 / 07期
基金：
中国国家自然科学基金;
关键词：
bilayer graphene quantum dots; rotational stacking faults; first-principles calculation;
D O I：
暂无
中图分类号：
TQ127.11 []; TB383.1 [];
学科分类号：
070205 ; 080501 ; 0817 ; 1406 ;
摘要：
Bilayer graphene quantum dots with rotational stacking faults(RSFs) having different rotational angles were studied.Using the first-principles calculation, we determined that these stacking faults could quantitatively modulate the magnetism and the distribution of spin and energy levels in the electronic structures of the dots.In addition, by examining the spatial distribution of unpaired spins and Bader charge analysis, we found that the main source of magnetic moment originated from the edge atoms of the quantum dots.Our research results can potentially provide a new path for producing all-carbon nanodevices with different electrical and magnetic properties.
引用
收藏
页码：508 / 514
页数：7
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