Theeffectsofprocessconditionsontheplasmacharacteristicinradio-frequencycapacitivelycoupledSiH4/NH3/N2plasmas:Two-dimensionalsimulations

被引：0

作者：

刘相梅 ^{[1
]}

宋远红 ^{[2
]}

姜巍 ^{[1
]}

易林 ^{[1
]}

机构：

[1] School of Physics, Huazhong University of Science and Technology

[2] School of Physics and Optoelectronic Technology, Dalian University of Technology

来源：

Chinese Physics B | 2013年 / 22卷 / 04期

关键词：

capacitively coupled plasma; process conditions effects; SiH4/NH3/N2; discharges;

D O I：

暂无

中图分类号：

O53 [等离子体物理学];

学科分类号：

070204 ;

摘要：

A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.

引用

页码：338 / 343

页数：6

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