Carbon nanotube/silicon heterojunctions for photovoltaic applications

被引：0

作者：

Xiangang Hu ^{[1
,2
]}

Pengxiang Hou ^{[1
,2
]}

Chang Liu ^{[1
,2
]}

Huiming Cheng ^{[1
,3
]}

机构：

[1] Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences

[2] Tsinghua-Berkeley Shenzhen Institute, Tsinghua University

[3] School of Materials Science and Engineering, University of Science and Technology of China

来源：

Nano Materials Science | 2019年 / 03期

基金：

中国国家自然科学基金;

关键词：

Carbon nanotube; Heterojunction; Solar cell; Photodetector; Gas sensor;

D O I：

暂无

中图分类号：

TB383.1 []; TM914.4 [太阳能电池];

学科分类号：

070205 ; 080501 ; 080502 ; 1406 ;

摘要：

Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues. Due to their simple structure and easy, low-temperature fabrication,heterojunctions of carbon nanotube(CNT) films and silicon(Si) have been used in solar cells, photodetectors and optoelectronic gas sensors. Significant progress has been made on the development of high-performance CNT/Si heterojunction devices, in particular, CNT/Si solar cells. Here, we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices. The effects of the structure of the CNTs, the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed. In addition, potential ways to further improve the performance of such photovoltaic devices are proposed. Finally, the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.

引用

页码：156 / 172

页数：17

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