Carbon nanotube/silicon heterojunctions for photovoltaic applications

被引：0
作者：
Xiangang Hu [1 ,2 ]
Pengxiang Hou [1 ,2 ]
Chang Liu [1 ,2 ]
Huiming Cheng [1 ,3 ]
机构：
[1] Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
[2] Tsinghua-Berkeley Shenzhen Institute, Tsinghua University
[3] School of Materials Science and Engineering, University of Science and Technology of China
来源：
Nano Materials Science | 2019年 / 03期
基金：
中国国家自然科学基金;
关键词：
Carbon nanotube; Heterojunction; Solar cell; Photodetector; Gas sensor;
D O I：
暂无
中图分类号：
TB383.1 []; TM914.4 [太阳能电池];
学科分类号：
070205 ; 080501 ; 080502 ; 1406 ;
摘要：
Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues. Due to their simple structure and easy, low-temperature fabrication,heterojunctions of carbon nanotube(CNT) films and silicon(Si) have been used in solar cells, photodetectors and optoelectronic gas sensors. Significant progress has been made on the development of high-performance CNT/Si heterojunction devices, in particular, CNT/Si solar cells. Here, we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices. The effects of the structure of the CNTs, the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed. In addition, potential ways to further improve the performance of such photovoltaic devices are proposed. Finally, the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.
引用
收藏
页码：156 / 172
页数：17
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