Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

被引：0

作者：

刘浩男 ^{[1
]}

索晓霞 ^{[1
]}

张林奥 ^{[1
]}

张端 ^{[2
]}

吴汉春 ^{[1
]}

赵宏康 ^{[1
]}

江兆潭 ^{[1
]}

李英兰 ^{[1
]}

王志 ^{[1
]}

机构：

[1] School of Physics, Beijing Institute of Technology

[2] Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University

来源：

ChinesePhysicsB | 2018年 / 27卷 / 02期

基金：

中国国家自然科学基金;

关键词：

resistive switching; ZnO; graphene; multilayer thin films;

D O I：

暂无

中图分类号：

TM564 [各种开关];

学科分类号：

080801 ;

摘要：

ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

引用

页码：526 / 530

页数：5

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