Anisotropic thermoelectric properties of layered compound SnSe2

被引：0

作者：

Peipei Xu ^{[1
]}

Tiezheng Fu ^{[1
]}

Jiazhan Xin ^{[1
]}

Yintu Liu ^{[1
]}

Pingjun Ying ^{[1
]}

Xinbing Zhao ^{[1
]}

Hongge Pan ^{[1
]}

Tiejun Zhu ^{[1
]}

机构：

[1] State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University

来源：

Science Bulletin | 2017年 / 62卷 / 24期

基金：

中国国家自然科学基金;

关键词：

SnSe2; Thermoelectric materials; Anisotropy; Thermoelectric properties;

D O I：

暂无

中图分类号：

TN304.2 [化合物半导体];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Similar to high performance SnSe thermoelectrics, SnSe2 is also a layered structured semiconductor.However, its anisotropic thermoelectric properties are less experimentally investigated. In this work,Cl-doped SnSe2 bulk materials are successfully prepared, and their thermal stability and anisotropic transport properties are systematically studied. Unexpectedly, different from the theoretical prediction and other typical layered thermoelectric compounds like BiTe, the out-of-plane zTvalue is higher than in-plane zTfor the same composition. The zT value is significantly enhanced by Cl doping. A maximum zTof ~0.4 at 673 K is achieved in SnSeCl, twice higher than previously reported Cl-doped SnSesynthesized by the solvothermal method.

引用

页码：1663 / 1668

页数：6

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