A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

被引：1

作者：

戈勤

陈晓娟

罗卫军

袁婷婷

庞磊

刘新宇

机构：

[1] Key Laboratory of Microwave Devices & Integrated Circuit

[2] Institute of Microelectronics

[3] Chinese Academy of Sciences

来源：

半导体学报 | 2011年 / 32卷 / 08期

关键词：

Ku-band; AlGaN/GaN HEMTs; power amplifier; monolithic; power density;

D O I：

暂无

中图分类号：

TN722.75 [];

学科分类号：

080902 ;

摘要：

<正>A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating(SI) 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm(6.3 W), a peak power added efficiency(PAE) of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at Vds = 25 V and Vgs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.

引用

页码：70 / 73

页数：4

共 11 条

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