Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells

被引：0

作者：

秦军瑞 ^{[1
]}

陈书明 ^{[1
]}

梁斌 ^{[1
]}

刘必慰 ^{[1
]}

机构：

[1] College of Computer,National University of Defense Technology

来源：

Chinese Physics B | 2012年 / 21卷 / 02期

基金：

中国国家自然科学基金;

关键词：

single event upset; multi-node charge collection; static random access memory; angular dependence;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

Using computer-aided design three-dimensional (3D) simulation technology,the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied.It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings.It cannot exhibit the recovery effect.It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases.Additionally,the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect,thus strengthening the recovery ability.

引用

页码：636 / 640

页数：5