Domain boundaries in silicene:Density functional theory calculations on electronic properties

被引:0
作者
肖红君
张礼智
杜世萱
高鸿钧
机构
[1] InstituteofPhysics,ChineseAcademyofSciences
关键词
domain boundaries; silicene; line defect; density functional theory;
D O I
暂无
中图分类号
O613.72 [硅Si]; O641.12 [化学键的量子力学理论];
学科分类号
070301 ; 081704 ; 070304 ;
摘要
By using density functional theory(DFT)-based first-principles calculations, the structural stability and electronic properties for two kinds of silicene domain boundaries, forming along armchair edge and zigzag edge, have been investigated. The results indicate that a linkage of tetragonal and octagonal rings(4|8) appears along the armchair edge, while a linkage of paired pentagonal and octagonal rings(5|5|8) appears along the zigzag edge. Different from graphene, the buckling properties of silicene lead to two mirror symmetrical edges of silicene line-defect. The formation energies indicate that the 5|5|8 domain boundary is more stable than the 4|8 domain boundary. Similar to graphene, the calculated electronic properties show that the 5|5|8 domain boundaries exhibit metallic properties and the 4|8 domain boundaries are half-metal.Both domain boundaries create the perfect one-dimensional(1D) metallic wires. Due to the metallic properties, these two kinds of nanowires can be used to build the silicene-based devices.
引用
收藏
页码:116 / 119
页数:4
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