The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

被引：0

作者：

王斌 ^{[1
]}

张鹤鸣 ^{[1
]}

胡辉勇 ^{[1
]}

张玉明 ^{[1
]}

周春宇 ^{[1
]}

王冠宇 ^{[1
]}

李妤晨 ^{[1
]}

机构：

[1] Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

来源：

Chinese Physics B | 2013年 / 02期

基金：

中央高校基本科研业务费专项资金资助;

关键词：

strained-Si pMOSFET; flatband voltage; threshold voltage; doping;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.

引用

页码：543 / 548

页数：6