Characteristics of Positron Trapping at Defects in Neutron－irradiated Silicon Grown in Argon Atmosphere

被引：0
|
作者：
孟祥提
机构：
来源：
RARE METALS | 1994年 / 02期
关键词：
Positron annihilation; Neutron irradiation; Silicon;
D O I：
暂无
中图分类号：
O613.72 [硅Si];
学科分类号：
070301 ; 081704 ;
摘要：
ＣｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＰｏｓｉｔｒｏｎＴｒａｐｐｉｎｇａｔＤｅｆｅｃｔｓｉｎＮｅｕｔｒｏｎ－ｉｒｒａｄｉａｔｅｄＳｉｌｉｃｏｎＧｒｏｗｎｉｎＡｒｇｏｎＡｔｍｏｓｐｈｅｒｅＭｅｎｇＸｉａｎｇｔｉ（孟祥提）（ＩｎｓｔｉｔｕｔｅｏｆＮｕｃｌｅａ...
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页码：101 / 107
页数：7
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