Polarization-independent terahertz wave modulator based on graphene-silicon hybrid structure

被引：0

作者：

杜亮亮 ^{[1
,2
]}

李泉 ^{[2
]}

李绍限 ^{[2
]}

胡放荣 ^{[1
]}

熊显名 ^{[1
]}

栗岩锋 ^{[1
]}

张文涛 ^{[1
]}

韩家广 ^{[2
]}

机构：

[1] College of Electrical Engineering and Automation, Guilin University of Electronic Technology

[2] Center for Terahertz Wave, Key Laboratory of Opto-electronic Information Technology, Ministry of Education, College of Precision Instrument and Optoelectronics Engineering, Tianjin University

来源：

Chinese Physics B | 2016年 / 02期

关键词：

terahertz; modulator; graphene;

D O I：

暂无

中图分类号：

TN761 [调制技术与调制器];

学科分类号：

080902 ;

摘要：

In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating.Under a pump power of 400 mW and the voltages ranging from-1.8 V to 1.4 V, modulation depths in a range of-23%–62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current–voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.

引用

页码：414 / 419

页数：6