Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC

被引：0

作者：

Xiuhong Wang ^{[1
]}

Zongwei Xu ^{[1
]}

Mathias Rommel ^{[2
]}

Bing Dong ^{[1
]}

Le Song ^{[1
]}

Clarence Augustine TH Tee ^{[3
,4
]}

Fengzhou Fang ^{[1
]}

机构：

[1] State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University

[2] Fraunhofer Institute for Integrated Systems and Device Technology(IISB)

[3] Department of Electrical Engineering, Faculty of Engineering, University of Malaya

[4] Centre of Advanced Research Enabler Facility, Faculty of Engineering, University of Malaya

来源：

NanotechnologyandPrecisionEngineering | 2019年 / 2卷 / 04期

关键词：

Electron paramagnetic resonance; Silicon carbide; Defects; Carbon vacancy;

D O I：

暂无

中图分类号：

TQ163.4 [];

学科分类号：

0817 ;

摘要：

Deep-level defects in silicon carbide（SiC） are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4 H-SiC after high-temperature annealing were studied using electron paramagnetic resonance（EPR） spectroscopy at temperatures of 77 K and 123 K under different illumination conditions. Results showed that the main defect in aluminum ion-implanted 4 H-SiC was the positively charged carbon vacancy（ VC+）, and the higher the doping concentration was, the higher was the concentration of VC+. It was found that the type of material defect was independent of the doping concentration,although more VC+ defects were detected during photoexcitation and at lower temperatures. These results should be helpful in the fundamental research of p-type 4 H-SiC fabrication in accordance with functional device development.

引用

页码：157 / 162

页数：6

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