Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

被引：0

作者：

孙建旭 ^{[1
]}

弭伟 ^{[1
]}

张德双 ^{[1
]}

杨正春 ^{[1
]}

张楷亮 ^{[1
]}

韩叶梅 ^{[1
]}

袁育杰 ^{[1
]}

赵金石 ^{[1
]}

李博 ^{[2
]}

机构：

[1] Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology

[2] Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

来源：

OptoelectronicsLetters | 2017年 / 13卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Gallium oxide（Ga2O3） films were deposited on singlecrystalline sapphire（0001） substrate by radio frequency（RF） magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer（XRD） and scanning electron microscope（SEM）. The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure（β-Ga2O3）. Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3（201） || Al2O3（0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared（UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices.

引用

页码：295 / 298

页数：4

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