Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates

被引：0

作者：

蒋仁渊 ^{[1
]}

许晟瑞 ^{[1
]}

张进成 ^{[1
]}

姜腾 ^{[1
]}

江海清 ^{[1
]}

王之哲 ^{[1
]}

樊永祥 ^{[1
]}

郝跃 ^{[1
]}

机构：

[1] Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

来源：

Chinese Physics Letters | 2015年 / 09期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

GaN; Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates;

D O I：

暂无

中图分类号：

O484 [薄膜物理学];

学科分类号：

080501 ; 1406 ;

摘要：

Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy(SIMS).Surface morphology,structural quality and related impurity incorporation are very sensitive to the growth temperature.A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films,which is confirmed by SIMS analysis.Our results show that the sample with triangular-pit morphology has significantly higher concentrations of oxygen than the other sample with pentagon-like pit morphology,which is induced by the existence of an N-face in triangular pits.

引用

页码：158 / 161

页数：4

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