Manipulation of Terahertz Radiation Using Vanadium Dioxide

被引:0
|
作者
Qi-Ye Wen [1 ]
机构
[1] State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China
基金
中国国家自然科学基金;
关键词
Active device; phase transition; terahertz(THz); vanadium dioxide;
D O I
暂无
中图分类号
TB383.2 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
Vanadium dioxide(VO2) is a phase transition material which undergoes a reversible metal-insulator transition(MIT) when triggered by thermal, photo, electrical, and even stress. The huge conduction change of VO2 renders it a promising material for terahertz(THz) manipulation. In this paper, some interesting works concerning the growth and characteristics of the VO2 film are selectively reviewed. A switching of THz radiation by photo-driven VO2 film is demonstrated. Experiments indicate an ultrafast optical switching to THz transmission within 8 picoseconds, and a switching ratio reaches to over 80% during a wide frequency range from 0.3 THz to 2.5 THz.
引用
收藏
页码:255 / 261
页数:7
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