Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

被引：0

作者：

王智辉 ^{[1
]}

王小兰 ^{[1
]}

刘军林 ^{[1
]}

张建立 ^{[1
]}

莫春兰 ^{[1
]}

郑畅达 ^{[1
]}

吴小明 ^{[1
]}

王光绪 ^{[1
]}

江风益 ^{[1
]}

机构：

[1] National Engineering Technology Research Center for LED on Si Substrate, Nanchang University

来源：

Chinese Physics Letters | 2018年 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN; Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes;

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.

引用

页码：91 / 94

页数：4