High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film

被引：3

作者：

支钰崧 ^{[1
]}

江为宇 ^{[1
]}

刘增 ^{[1
,2
]}

刘媛媛 ^{[3
,4
]}

褚旭龙 ^{[1
,5
]}

刘佳航 ^{[1
]}

李山 ^{[1
]}

晏祖勇 ^{[1
]}

王月晖 ^{[1
]}

李培刚 ^{[1
]}

吴真平 ^{[1
]}

唐为华 ^{[1
,2
]}

机构：

[1] Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications

[2] College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications

[3] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

[4] The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors,Chinese Academy of Sciences

[5] China Aerospace System Simulation Technology Co., Ltd.(Beijing)

来源：

ChinesePhysicsB | 2021年 / 30卷 / 05期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

D O I：

暂无

中图分类号：

TQ133.51 []; TB383.2 []; TN23 [紫外技术及仪器];

学科分类号：

摘要：

Si-doped β-Ga2O3films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W-1. The Si-doped β-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

引用

页码：594 / 600

页数：7

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