Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

被引：1
作者：
仵乐娟 [1 ]
李述体 [1 ]
刘超 [1 ]
王海龙 [1 ]
卢太平 [1 ]
张康 [1 ]
肖国伟 [2 ]
周玉刚 [2 ]
郑树文 [1 ]
尹以安 [1 ]
杨孝东 [1 ]
机构：
[1] Institute of Opto-electronic Materials and Technology,South China Normal University
[2] APT Electronics Ltd,Nansha District
来源：
ChinesePhysicsB | 2012年 / 21卷 / 06期
基金：
中国国家自然科学基金;
关键词：
GaN-based light-emitting diodes; hole injection layer; injection efficiency;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software.The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance,such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-AlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency.
引用
收藏
页码：587 / 591
页数：5
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