Subthreshold current model of fully depleted dual material gate SOI MOSFET

被引：0

作者：

苏军 ^{[1
]}

李尊朝 ^{[2
]}

张莉丽 ^{[1
]}

机构：

[1] School of Computer Science,Xi'an Polytechnic University

[2] School of Electronics and Information Engineering,Xi'an Jiaotong University

来源：

Academic Journal of Xi'an Jiaotong University | 2007年 / 02期

基金：

中国国家自然科学基金;

关键词：

asymmetrical halo; dual material gate; subthreshold current;

D O I：

暂无

中图分类号：

TN386.1 [金属-氧化物-半导体（MOS）器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson’s equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.

引用

页码：135 / 137 +171

页数：4

共 4 条

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何进
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