Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

被引：0

作者：

娄永乐 ^{[1
]}

张玉明 ^{[1
]}

郭辉 ^{[1
]}

徐大庆 ^{[2
]}

张义门 ^{[1
]}

机构：

[1] School of Microelectronics,Xidian University

[2] School of Electrical and Control Engineering,Xi'an University of Science and Technology

来源：

Chinese Physics Letters | 2016年 / 33卷 / 11期

关键词：

MgO; of; TMR; Fe; Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions; in; is; that; on;

D O I：

暂无

中图分类号：

O482.5 [磁学性质];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance(TMR),different structures of magnetic tunnel junctions(MTJs) are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy,a physical property measurement system,x-ray photoelectron spectroscopy,and transmission electron microscopy.The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface,which occurs in CoFeB/MgO/CoFeB MTJs.The inherent properties of the CoFeB/MgO/CoFeB,CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions.The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs.Based on the experimental results and theoretical analysis,it is believed that in CoFeB/MgO/CoFeB MTJs,the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR,and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation,and then increasing TMR.

引用

页码：128 / 130

页数：3