Top-gated graphene field-effect transistors on SiC substrates

被引：0
作者：
MA PengJIN ZhiGUO JianNanPAN HongLiangLIU XinYuYE TianChunJIA YuPingGUO LiWei CHEN XiaoLong Department of Microwave ICInstitute of MicroelectronicsChinese Academy of SciencesBeijing China Research Development Center for Functional CrystalsBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing China [1 ,1 ,1 ,1 ,1 ,1 ,2 ,2 ,2 ,1 ,100029 ,2 ,100190 ]
机构：
来源：
Chinese Science Bulletin | 2012年 / 57卷 / 19期
关键词：
graphene; radio frequency(RF); field-effect transistor(FET); SiC;
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC substrate.Composite stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of graphene.All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain voltages.Despite a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm.
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页码：2401 / 2403
页数：3
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