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- [2] Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−xGex Science China Physics, Mechanics and Astronomy, 2012, 55 : 2033 - 2037
- [5] Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-Si1-xGex Journal of Wuhan University of Technology-Mater. Sci. Ed., 2015, 30 : 888 - 893
- [6] Intrinsic Carrier Concentration as a Function of Stress in (001), (101) and (111) Biaxially-Strained-Si and Strained-Si1-xGex JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2015, 30 (05): : 888 - 893
- [7] Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes Journal of Materials Science: Materials in Electronics, 1998, 9 : 403 - 407
- [8] Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101) LIQUID CRYSTALS AND RELATED MATERIALS II, 2012, 181-182 : 364 - 369
- [9] Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes J Mater Sci Mater Electron, 6 (403-407):