Longitudinal,transverse,density-of-states,and conductivity masses of electrons in(001),(101) and(111) biaxiallystrained-Si and strained-Si1-xGex

被引:5
|
作者
SONG JianJun *
机构
基金
高等学校博士学科点专项科研基金;
关键词
strained Si; strained Si1-xGex; effective mass; electron;
D O I
暂无
中图分类号
O481 [固体理论];
学科分类号
070205 ; 0805 ; 080502 ; 0809 ;
摘要
In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and Si1-xGex.It is found that the effect of strain on the longitudinal and transverse masses can be neglected,that the density-of-states masses in(001) and(110) biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction(x),and that the conductivity masses along typical orientations in(001) and(110) strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.
引用
收藏
页码:2033 / 2037
页数:5
相关论文
共 17 条
  • [1] Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1-xGex
    Song JianJun
    Yang Chao
    Zhang HeMing
    Hu HuiYong
    Zhou ChunYu
    Wang Bin
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2012, 55 (11) : 2033 - 2037
  • [2] Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−xGex
    JianJun Song
    Chao Yang
    HeMing Zhang
    HuiYong Hu
    ChunYu Zhou
    Bin Wang
    Science China Physics, Mechanics and Astronomy, 2012, 55 : 2033 - 2037
  • [3] Intrinsic Carrier Concentration as a Function of Stress in(001),(101) and(111) BiaxiallyStrained-Si and Strained-Si1-xGex
    靳钊
    QIAO Liping
    LIU Lidong
    HE Zhili
    GUO Chen
    LIU Ce
    Journal of Wuhan University of Technology(Materials Science), 2015, 30 (05) : 888 - 893
  • [4] Directional, averaged and density of states effective masses of hole in (001), (101) and (111) biaxially strained Si and strained Si1-xGex materials
    Zhang, C.
    MATERIALS RESEARCH INNOVATIONS, 2014, 18 : 753 - 758
  • [5] Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-Si1-xGex
    Zhao Jin
    Liping Qiao
    Lidong Liu
    Zhili He
    Chen Guo
    Ce Liu
    Journal of Wuhan University of Technology-Mater. Sci. Ed., 2015, 30 : 888 - 893
  • [6] Intrinsic Carrier Concentration as a Function of Stress in (001), (101) and (111) Biaxially-Strained-Si and Strained-Si1-xGex
    Jin Zhao
    Qiao Liping
    Liu Lidong
    He Zhili
    Guo Chen
    Liu Ce
    JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2015, 30 (05): : 888 - 893
  • [7] Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
    S. Chattopadhyay
    L. K. Bera
    C. K. Maiti
    S. K. Ray
    P. K. Bose
    D. Dentel
    L. Kubler
    J. L. Bischoff
    Journal of Materials Science: Materials in Electronics, 1998, 9 : 403 - 407
  • [8] Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)
    Wang, Cheng
    Zhang, He-ming
    Xuan, Rong-xi
    Hu, Hui-yong
    LIQUID CRYSTALS AND RELATED MATERIALS II, 2012, 181-182 : 364 - 369
  • [9] Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
    IIT Kharagpur, India
    J Mater Sci Mater Electron, 6 (403-407):
  • [10] Scattering mechanism of hole in (001), (101), (111) biaxially-strained Si and Si1-xGex materials
    Zhao Lixia
    Yang Chao
    Zhu He
    Song Jianjun
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (07)