LuminescenceCharacteristicsofYb3+andEr3+inⅢ-ⅤSemiconductors

被引：0

作者：

曹望和

张联苏

机构：

[1] Changchun Institute of Physics Academia Sinica

[2] Changchun

[3] China

[4] Changchun Institute of Physics

[5] Academia Sinica

来源：

JournalofRareEarths | 1991年 / 01期

关键词：

Rare earth ion; Ⅲ-Ⅴ; Semiconductor; Luminescence; Ion-implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

<正> The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at77K.The peaks at 1.0 and 1.5μm come from（4f）2F5/2→2F7/2of Yb3+and 4I13/2→4I15/2of Er3+,respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam-ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curveof X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an-nealing at 850℃.The interaction between Yb3+and Er3+in the SI-InP has been investigated for the first time.The quenching effect of Yb3+and Er3+with each other has been observed when the doses of Yb and Er-im-planted SI-InP are equal.

引用

页码：31 / 34

页数：4