Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-Ⅱ Superlattice

被引：0

作者：

于海龙 ^{[1
]}

吴皓越 ^{[1
]}

朱海军 ^{[1
]}

宋国峰 ^{[1
]}

徐云 ^{[1
]}

机构：

[1] Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences

来源：

Chinese Physics Letters | 2016年 / 12期

基金：

中国国家自然科学基金;

关键词：

GaSb; is; InSb; Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type; Superlattice; InAs; of;

D O I：

暂无

中图分类号：

O78 [晶体生长];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Type-Ⅱ InAs/GaSb superlattices made of 13 InAs monolayers(MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy.To obtain lattice-matched structures,thin InSb layers are inserted between InAs and GaSb layers.We complete a series of experiments to investigate the influence of the InSb deposition time,Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer,and then characterize the superlattice(SL) structures with high-resolution x-ray diffraction and atomic force microscopy.The optimized growth parameters are applied to grow the 100-period SL structure,resulting in the full-width half-maximum of 29.55 arcsec for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.

引用

页码：146 / 149

页数：4

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