Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets

被引：0

作者：

彭丽萍 ^{[1
,2
]}

FANG Liang ^{[2
]}

ZHAO Yan ^{[1
]}

WU Weidong ^{[1
]}

RUAN Haibo ^{[2
,3
]}

KONG Chunyang ^{[3
]}

机构：

[1] Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP

[2] Department of Applied Physics, Chongqing University

[3] Department of Applied physics, Chongqing Normal University

来源：

JournalofWuhanUniversityofTechnology(MaterialsScience) | 2017年 / 32卷 / 04期

基金：

中国国家自然科学基金;

关键词：

RF magnetron sputtering; optical properties; indium-doped ZnO; semiconducting; Ⅱ-Ⅵ; materials;

D O I：

暂无

中图分类号：

TN304.055 [];

学科分类号：

摘要：

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10Ω·cm and the highest carrier concentration of 1.86×10cmcan be obtained from Zn O thin films with an indium content of 5at% in the target.

引用

页码：866 / 870

页数：5

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