Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets

被引：0
|
作者：
彭丽萍 [1 ,2 ]
FANG Liang [2 ]
ZHAO Yan [1 ]
WU Weidong [1 ]
RUAN Haibo [2 ,3 ]
KONG Chunyang [3 ]
机构：
[1] Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP
[2] Department of Applied Physics, Chongqing University
[3] Department of Applied physics, Chongqing Normal University
来源：
JournalofWuhanUniversityofTechnology(MaterialsScience) | 2017年 / 32卷 / 04期
基金：
中国国家自然科学基金;
关键词：
RF magnetron sputtering; optical properties; indium-doped ZnO; semiconducting; Ⅱ-Ⅵ; materials;
D O I：
暂无
中图分类号：
TN304.055 [];
学科分类号：
摘要：
Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10Ω·cm and the highest carrier concentration of 1.86×10cmcan be obtained from Zn O thin films with an indium content of 5at% in the target.
引用
收藏
页码：866 / 870
页数：5
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