Design and simulation of a novel CMOS superimposed photodetector

被引：0

作者：

康玉琢 ^{[1
]}

毛陆虹 ^{[1
]}

肖新东 ^{[1
]}

谢生 ^{[1
]}

张世林 ^{[1
]}

机构：

[1] School of Electronic Information Engineering,Tianjin University

来源：

OptoelectronicsLetters | 2012年 / 8卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Design and simulation of a novel CMOS superimposed photodetector; CMOS; MSM;

D O I：

暂无

中图分类号：

TN36 [半导体光电器件];

学科分类号：

0803 ;

摘要：

A novel superimposed photodetector(PD)is put forward.The photodetector can obtain a couple of differential photocur-rent signals from one input optical signal.The light injection efficiency and the vertical work distance of this new photode-tector are much higher than those of the others.The superimposed photodetctor is designed based on the standard 0.18μm CMOS process.The responsivity,bandwidth and transient response of the photodetector are simulated by a commercial simulation software of ATLAS.The responsivities of two obtained photocurrent signals are 0.035 A/W and 0.034 A/W,while the bandwidths are 3.8 GHz and 5.2 GHz,respectively.A full differential optical receiver which uses the superim-posed photodetector as input is simulated.The frequency response and 4 Gbit/s eye diagram of the optical receiver are also obtained.The results show that the two output signals can be used as the differential signal.

引用

页码：249 / 252

页数：4

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