Study on electroluminescence from porous silicon light-emitting diode

被引：3

作者：

杨亚军

李清山

刘宪云

机构：

[1] College of Physics and Engineering Qufu Normal University

[2] Qufu 273165

来源：

Chinese Optics Letters | 2006年 / 05期

关键词：

Study on electroluminescence from porous silicon light-emitting diode; LED; PS; ITO;

D O I：

暂无

中图分类号：

TN315.2 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

引用

页码：297 / 298

页数：2