The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters
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马振洋
[1
]
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柴常春
[1
]
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任兴荣
[1
]
杨银堂
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School of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian UniversitySchool of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University
杨银堂
[1
]
赵颖博
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School of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian UniversitySchool of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University
赵颖博
[1
]
乔丽萍
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School of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian UniversitySchool of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University
乔丽萍
[1
]
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[1] School of Microelectronics,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University
bipolar transistor;
high power microwave;
pulse repetition frequency;
duty cycle;
D O I:
暂无
中图分类号:
TN322.8 [];
学科分类号:
0805 ;
080501 ;
080502 ;
080903 ;
摘要:
In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as a function of pulse repetition frequency(PRF) and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ma Zhen-Yang
Chai Chang-Chun
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Chai Chang-Chun
Ren Xing-Rong
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ren Xing-Rong
Yang Yin-Tang
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Yang Yin-Tang
Zhao Ying-Bo
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Zhao Ying-Bo
Qiao Li-Ping
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
机构:
School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
杨银堂
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陈斌
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宋坤
赵颖博
论文数: 0引用数: 0
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School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ma Zhen-Yang
Chai Chang-Chun
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机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Chai Chang-Chun
Ren Xing-Rong
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机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ren Xing-Rong
Yang Yin-Tang
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Yang Yin-Tang
Chen Bin
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Chen Bin
Song Kun
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Song Kun
Zhao Ying-Bo
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Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
机构:
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, ChinaCollege of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, China
Zhang, Cunbo
Zhang, Jiande
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College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, ChinaCollege of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, China
Zhang, Jiande
Wang, Honggang
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College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, ChinaCollege of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, China
Wang, Honggang
Du, Guangxing
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College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, ChinaCollege of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha,410073, China
Du, Guangxing
Guofang Keji Daxue Xuebao/Journal of National University of Defense Technology,
2015,
37
(02):
: 1
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4
机构:
School of Microelectronics,Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics,Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
杨银堂
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陈斌
赵颖博
论文数: 0引用数: 0
h-index: 0
机构:
School of Microelectronics,Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics,Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ma Zhen-Yang
Chai Chang-Chun
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Chai Chang-Chun
Ren Xing-Rong
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Ren Xing-Rong
Yang Yin-Tang
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Yang Yin-Tang
Chen Bin
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
Chen Bin
Zhao Ying-Bo
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
机构:
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R ChinaXidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R China
Wang, Qiankun
Chai, Changchun
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Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R ChinaXidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R China
Chai, Changchun
Liu, Yuqian
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Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R ChinaXidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R China
Liu, Yuqian
Yang, Yintang
论文数: 0引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R ChinaXidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R China
机构:
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
Qiankun Wang
Changchun Chai
论文数: 0引用数: 0
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机构:
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
Changchun Chai
Yuqian Liu
论文数: 0引用数: 0
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机构:
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
Yuqian Liu
Yintang Yang
论文数: 0引用数: 0
h-index: 0
机构:
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices