Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

被引：0

作者：

陈荔群 ^{[1
]}

陈阳华 ^{[2
]}

李成 ^{[2
]}

机构：

[1] Chengyi College,Jimei University

[2] Department of Physics,Semiconductor Photonics Research Center,Xiamen University

来源：

Optoelectronics Letters | 2014年 / 10卷 / 03期

关键词：

SiGe; SOI; well; Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The tensile strained Ge/SiGe multiple quantum wells(MQWs) grown on a silicon-on-insulator(SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition.Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2.The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate,and the full width at half maximum(FWHM) is significantly reduced.It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices.

引用

页码：213 / 215

页数：3

共 12 条

[1]

MBE growth of tensile-strained Ge quantum wells and quantum dots. Huo Y J,Lin H,Chen R,Rong Y W,Kamins T I,Harris J S. Frontiers of Optoelectronics . 2012

[2]

Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes[J] . Marc Schmid,Michael Oehme,Martin Gollhofer,Roman K?rner,Mathias Kaschel,Erich Kasper,Joerg Schulze. &nbspThin Solid Films . 2013

[3]

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate. Yanghua Chen,Cheng Li,Zhiwen Zhou,Hongkai Lai,Songyan Chen,Wuchang Ding,Buwen Cheng,Yude Yu. Applied Physics . 2009

[4]

Xiaoxin Wang,Haofeng Li,R.Camacho-Aguilera,Yan Cai,L.C.Kimerling,J.Michel,Jifeng Liu. Optics Letters . 2013

[5] Nanotechnology [P].

COLLI ALAN[GB] ;

WHITE RICHARD[GB] .

美国专利 :US2012038409A1 ,2012-02-16

[6]

Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator. Li, Cheng,Chen, Yanghua,Zhou, Zhiwen,Lai, Hongkai,Chen, Songyan. Applied Physics . 2009

[7]

Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy. Huo, Yijie,Lin, Hai,Chen, Robert,Makarova, Maria,Rong, Yiwen,Li, Mingyang,Kamins, Theodore I.,Vuckovic, Jelena,Harris, James S. Applied Physics . 2011

[8]

W.J.Fan. Journal of Applied Physics . 2013

[9]

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon. Yu-Hsuan Kuo,Yong Kyu Lee,Yangsi Ge,Shen Ren,Jonathan E. Roth,Theodore I. Kamins,David A. B. Miller,James S. Harris. Nature . 2005

[10]

Electroluminescence of Unstrained and Tensile Strained Ge-on-Si LEDs. M.Schmid,M.Oehme,M.Gollhofer,M.Kasche,E.Kasper,J.Schulze. Group IV Photonics (GFP), 2012 IEEE 9th International Conference on . 2012

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