Perpendicular magnetic tunnel junction and its application in magnetic random access memory

被引：0
作者：
刘厚方 [1 ]
Syed Shahbaz Ali [1 ]
韩秀峰 [1 ]
机构：
[1] Beijing National Laboratory of Condensed Matter Physics Institute of Physics,Chinese Academy of Sciences
来源：
Chinese Physics B | 2014年 / 23卷 / 07期
基金：
中国国家自然科学基金;
关键词：
magnetic random access memory; perpendicular magnetic anisotropy; spin transfer torque effect; magnetic tunnel junction;
D O I：
暂无
中图分类号：
TP333 [存贮器];
学科分类号：
081201 ;
摘要：
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy(PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy(PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE–TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn–Ga, L10-ordered(Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
引用
收藏
页码：17 / 25
页数：9
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