Perpendicular magnetic tunnel junction and its application in magnetic random access memory

被引：0

作者：

刘厚方 ^{[1
]}

Syed Shahbaz Ali ^{[1
]}

韩秀峰 ^{[1
]}

机构：

[1] Beijing National Laboratory of Condensed Matter Physics Institute of Physics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2014年 / 23卷 / 07期

基金：

中国国家自然科学基金;

关键词：

magnetic random access memory; perpendicular magnetic anisotropy; spin transfer torque effect; magnetic tunnel junction;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy(PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy(PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE–TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn–Ga, L10-ordered(Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

引用

页码：17 / 25

页数：9

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