ZnO Films on Transferable and Low Thermal Resistance Graphite Substrate Grown by Ultrasonic Spray Pyrolysis

被引:0
作者
边继明 [1 ,2 ]
MA Xiaowen [1 ]
SUN Jingchang [3 ]
ZHANG Zhikun [1 ]
WANG Yuxin [3 ]
QIN Fuwen [1 ]
LUO Yingmin [1 ]
ZHANG Yuzhi [2 ]
FU Xianping [4 ]
机构
[1] School of Physics and Optoelectronic Technology, Dalian University of Technology
[2] Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences
[3] School of Physics and Electronic Technology, Liaoning Normal University
[4] Information Science & Technology College, Dalian Maritime University
关键词
ZnO; graphite; photoluminescence; transferable devices;
D O I
暂无
中图分类号
TB383.2 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn(CH 3 COO) 2 ·2H 2 O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet(UV) emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin fi lms could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with suffi cient power durability.
引用
收藏
页码:428 / 432
页数:5
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