Asymptotic Convergence to Steady-State Solutions for Solutions of the Initial Boundary Problem to a Simplified Hydrodynamic Model for Semiconductor

被引：0

作者：

Ying Guliang Department of Mathematics Xianning Teachers College Xia nning China ^{[437005
]}

机构：

来源：

WuhanUniversityJournalofNaturalSciences | 2000年 / 03期

关键词：

semiconductor; hydrodynamic model; asym ptotic convergence;

D O I：

暂无

中图分类号：

O411.1 [数学物理方法];

学科分类号：

0701 ; 070104 ;

摘要：

We studied the asymptotic behavior of sol utions to the initial boundary value problem on the spatial interval [0,1] for a one-dimensional simplified gydrodynamic model for semiconductors when g(t)→b*, and proved the unique global existence of smooth solutions to the initial boundary problem. We also show that the solutions converge to the corre sponding steady-state solutions time-asymptotically by introducing the suitabl e shift functions.

引用

页码：265 / 270

页数：6