Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

被引：0
作者：
吴丽娟 [1 ,2 ]
胡盛东 [3 ]
罗小蓉 [1 ]
张波 [1 ]
李肇基 [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
[2] College of Communication Engineering, Chengdu University of Information Technology
[3] College of Communication Engineering, Chongqing University
来源：
Chinese Physics B | 2011年 / 10期
基金：
中国国家自然科学基金;
关键词：
interface charges; breakdown voltage; partial-SOI; accumulation holes; self-heating effect;
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E I ) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and 582 V, respectively, compared with 81.5 V/μm and 123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.
引用
收藏
页码：373 / 378
页数：6
相关论文
共 19 条
  • [1] Qiao M,Zhang B,Li Z J. Proc.20th Int.Symp.Power Semicond.Dev.ICs . 2008
  • [2] NewHigh-voltage（>1200V）MOSFET With the Charge Trenches on Partial SOI. LuoXR,LiZJ,ZhangB. IEEE Trans.on Electron Device . 2008
  • [3] Nitta T,Yanagi S,Miyajima T,Puruya K,Otsu Y,Onoda H,Hatasako K. Proc.18th Int.Symp.Power Semicond.Dev.ICs . 2006
  • [4] Park J M,Grasser T,Kosina H,Selberherr S. Solid State Electronics . 2003
  • [5] Li Q,Zhang B,Li Z J. Acta Physica Sinica . 2008
  • [6] Realizing high breakdown voltages (>600 V) in partial SOI technology. Ramakrishna Tadikonda Shyam Hardikar and E. M. Sankara Narayanan. Solid State Electronics . 2004
  • [7] Wu L J,Hu S D,Zhang B,Li Z J. J. Semicond . 2010
  • [8] Terashima T,Yamamoto F,Hatasako K,Hine S. Proc.13th Int.Symp.Power Semicond.Dev.ICs . 2001
  • [9] Li Z J,Zhang B,Luo X R,Hu S D,Fang J,Li Z H,Qiao M,Guo Y F. Proc.Int.Conf.Commun.Circuits and Systems . 2007
  • [10] Hu S D,Li Z J,Zhang B,Luo X R. Chin. Phys. B . 2010
12