Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

被引:0
作者
李云
机构
[1] Department of Materials Science and Engineering,Yunnan University
[2] Department of Chemistry,KAIST,373-1 Guseong-dong,Yuseong-gu,Daejeon 305-701,Republic of Korea
[3] Department of Chemistry,Seoul National University,Seoul 151-747,Republic of Korea
基金
中国国家自然科学基金;
关键词
tunnelling magnetoresistance; spin filtering barrier; magnetic tunnelling junctions; spin-orbit coupling;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Buttiker formalism and taking into account the spin-orbit coupling(SOC).It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier(FB) and the ferromagnetic electrode than that in antiparallel case.The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.
引用
收藏
页码:367 / 372
页数:6
相关论文
共 29 条
  • [1] Gould C,Riister C,Jungwirth T,Girgis E,Schott G M,Giraud R,Brunner K,Schmidt G,Molenkamp L W. Physical Review Letters . 2004
  • [2] Rashba E I. Physical Review B Condensed Matter and Materials Physics . 2000
  • [3] Schmidt G,Ferrand D,Molenkamp L W,et al.Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Physical Review B Condensed Matter and Materials Physics . 2000
  • [4] Saffarzadeh A. Journal of Magnetism and Magnetic Materials . 2004
  • [5] Ohno Y,Young D K,Beschoten B,Matsukura F,Ohno H,Awschalom D D. Nature . 1999
  • [6] LeClair,P.E.,Ha,J.K.,Swagten,H.J.M.,Kohlhepp,J.T.,van de,Vin,C.H.,de,Jonge,W.J.M. Applied Physics Letters . 2002
  • [7] Naghama T,Santos T S,Moodera J S. Physical Review Letters . 2007
  • [8] Zhu H J,Ramsteiner M,Kostial H,Wassermeier M,Schonherr H P,Ploog K H. Physics Review Letters . 2001
  • [9] Christian Heiliger,Peter Zahn,Bogdan Yu Yavorsky,Ingrid Mertig.Influence of the interface structure on the bias dependence of tunneling magnetoresistance. Physical Review B Condensed Matter and Materials Physics . 2005
  • [10] Jonker B T,Park Y D,Bennett B R,Cheong H D,Kioseoglou G,Petrou A. Physical Review B Condensed Matter and Materials Physics . 2000