Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p~+-Si with Different Thicknesses of Resistance Films Fabricated through Sol–Gel Method

被引：0

作者：

闫帅帅 ^{[1
]}

王华 ^{[1
]}

XU Jiwen ^{[1
]}

YANG Ling ^{[1
]}

机构：

[1] School of Materials Science and Engineering,Guilin University of Electronic Technology

来源：

JournalofWuhanUniversityofTechnology(MaterialsScience) | 2019年 / 34卷 / 03期

基金：

中国国家自然科学基金;

关键词：

La0.5Mg0.5MnO3; thickness; RRAM; sol-gel;

D O I：

暂无

中图分类号：

TB383.2 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

Ag/LaMgMnO/p~+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of LaMgMnO(LMMO) films on current-voltage(I-V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p~+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p~+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p~+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 10~4 for 1 000 switching cycles, and its degradation is invisible for more than 10~6 s.

引用

页码：568 / 571

页数：4

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