STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures

被引：0

作者：

秦志辉 ^{[1
]}

时东霞 ^{[1
]}

庞世瑾 ^{[1
]}

高鸿钧 ^{[1
]}

机构：

[1] Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2008年 / 03期

基金：

中国国家自然科学基金;

关键词：

scanning tunnelling microscopy; surface structures; Ge; In;

D O I：

暂无

中图分类号：

O472.1 [];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320 C with different coverages of In.Annealing a sample with a critical coverage of 2.1 monolayer of In,different In/Ge(001) nanostructures can be obtained at different temperatures.It is found that thermal annealing treatments first make In atoms form elongated Ge { 103 }-faceted In-clusters,which will grow wider and longer with increasing temperature,and finally cover the surface completely.

引用

页码：1055 / 1059

页数：5

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