STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures

被引：0

作者：

秦志辉 ^{[1
]}

时东霞 ^{[1
]}

庞世瑾 ^{[1
]}

高鸿钧 ^{[1
]}

机构：

[1] Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2008年 / 03期

基金：

中国国家自然科学基金;

关键词：

scanning tunnelling microscopy; surface structures; Ge; In;

D O I：

暂无

中图分类号：

O472.1 [];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320 C with different coverages of In.Annealing a sample with a critical coverage of 2.1 monolayer of In,different In/Ge(001) nanostructures can be obtained at different temperatures.It is found that thermal annealing treatments first make In atoms form elongated Ge { 103 }-faceted In-clusters,which will grow wider and longer with increasing temperature,and finally cover the surface completely.

引用

页码：1055 / 1059

页数：5

共 26 条

[1] Oncel. Physical Review Letters . 2005
[2] S. Sun,C. B. Murray,D. Weller,L. Folks,A. Moser. Science . 2000
[3] Liu HC,Zhang XJ,Yang YY,et al.The stereoselectivity in renal clearance of trans-tramadol and its active metabolite, trans-O-demethyltramadol. Acta Pharmacological Sinica . 2002
[4] Wei S Y,Wang J G,and Ma L. Chinese Physics . 2004
[5] Bottomley D J,Iwami M,Uehara Y,Ushioda S. J.Vae.Sci.Technol.B . 1999
[6] Mo Y W,Lagally M G. Journal of Crystal Growth . 1991
[7] Gai Z,Ji H,He Y,Hu C,Zhao R G,Yang W S. Surface Science Reports . 1995
[8] Gu C Z,Braun K F,Rieder K H. Chinese Physics . 2002
[9] Nielsen M,Smilgies D M,Feidenhans R,Landemark E,Falkenberg G,Lottermoser L,Seehofer L,Johnson R L. Surface Science Reports . 1996
[10] Qin Z H,Shi D X,Ji W,Pan S J,Gao H J. Nanotechnology . 2006

← 1 2 3 →