MEASUREMENT OF VACANCY MIGRATION ENERGY BY ELECTRON IRRADIATION

被引:0
作者
WAN Farong XIAO Jimei YUAN Yi University of Science and Technology BeijingBeijingChina Lecturer Department of Material PhysicsUniversity of Science and Technology BeijingBeijing China [100083 ]
机构
关键词
electron irradiation damage; vacancy migration energy; interstitial loop;
D O I
暂无
中图分类号
学科分类号
摘要
<正> A method together with a new formula were developed for measuring the vacancy migrationenergy on HVEM considering the effect of surface sink of specimen on point defects.The va-cancy migration energy may be calculated through the loop growth rate under electronirradiation at various temperatures.
引用
收藏
页码:372 / 374
页数:3
相关论文
empty
未找到相关数据