GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

被引：2

作者：

黄红娟 ^{[1
]}

闫大为 ^{[1
]}

王国胜 ^{[2
]}

谢峰 ^{[2
]}

杨国锋 ^{[1
]}

肖少庆 ^{[1
]}

顾晓峰 ^{[1
]}

机构：

[1] Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University

[2] The th Research Institute of China Electronics Technology Group Corporation

来源：

ChineseOpticsLetters | 2014年 / 12卷 / 09期

关键词：

GaN-based p; PD; n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates; type;

D O I：

暂无

中图分类号：

TN23 [紫外技术及仪器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

We study the performance of GaN-based p–i–n ultraviolet（UV） photodetectors（PDs） with a 60 nm thin ptype contact layer grown on patterned sapphire substrate（PSS）. The PDs on PSS exhibit a low dark current of 2 pA under a bias of-5 V, a large UV/visible rejection ratio of 7×103, and a high-quantum efficiency of 40% at 365 nm under zero bias. The average quantum efficiency of the PDs still remains above 20% in the deep-UV region from 280 to 360 nm. In addition, the noise characteristics of the PDs are also discussed, and the corresponding specific detectivities limited by the thermal noise and the low-frequency 1/f noise are calculated.

引用

页码：70 / 73

页数：4

共 17 条

[1]

T.Li,D.J.H.Lambert,M.M.Wong,C.J.Collins,B.Yang,A.L.Beck,U.Chowdhury,R.D.Durpuis,J.C.Campbell. Optical and Quantum Electronics . 2001

[2]

Role of threading dislocation structure on the x-ray Diffraction Peak widths in ePitaxial GaNfilms. Heying B,X H Wu,Keller S et al. Applied Physics . 1996

[3]

Metal-semiconductor-metal ultraviolet avalanche photodiodes fabricated on bulk GaN substrate. Xie, F,Lu, H,Chen, D.J,Xiu, X.Q,Zhao, H,Zhang, R,Zheng, Y.D. IEEE Electron Device Letters . 2011

[4]

H.Jiang,T.Egawa. Applied Physics Letters . 2007

[5]

GaN-based MSM photodetectors prepared on patterned sapphire substrates. Chang, Shoou-Jinn,Jhou, Y.D,Lin, Y.C,Wu, S.L,Chen, C.H,Wen, T.C,Wu, L.W. IEEE Photonics Technology Letters . 2008

[6]

Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN. Sheu, J.K,Lee, M.L,Tun, C.J,Lin, S.W. Applied Physics . 2006

[7]

D.W.Yan,H.Lu,D.J.Chen,R.Zhang,Y.D.Zheng. Applied Physics Letters . 2010

[8]

Short-wavelength solar-blind detectors-status, prospects, and markets. Razeghi Manijeh. Proceedings of Tricomm . 2002

[9]

Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates. Wuu D S,Wang W K,Shih W C,et al. IEEE Photonics Technology Letters . 2005

[10]

Y.Z.Chiou,Y.G.Lin,T.K.Ko. Seed Science and Technology . 2009

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