Naphthalene diimide based near-infrared luminogens with aggregation-induced emission characteristics for biological imaging and high mobility ambipolar transistors

被引:0
|
作者
De Guo [1 ,2 ,3 ]
Lin Li [3 ]
Xianqi Zhu [3 ]
Martin Heeney [4 ]
Jing Li [1 ]
Lichun Dong [5 ]
Qingsong Yu [3 ]
Zhihua Gan [3 ]
Xinggui Gu [3 ]
Luxi Tan [5 ]
机构
[1] Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences
[2] University of Chinese Academy of Sciences
[3] Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Chemical Resource Engineering, State Key Laboratory of Organic-Inorganic Composite Materials, Beijing Laboratory of Biomedical Materials, Beijing University
[4] Department of Chemistry and Centre for Plastic Electronics, Imperial College London
[5] Chongqing Key Laboratory of Theoretical and Computational Chemistry, School of Chemistry and Chemical Engineering,Chongqing University
基金
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;
关键词
D O I
暂无
中图分类号
TN322.8 []; TB34 [功能材料];
学科分类号
080501 ;
摘要
Organic conjugated materials combining high conductivity with strong solid-state emission are highly desired for organic electronic applications, yet still rather rare. Herein, a novel luminogen(TEN) comprised by linking naphthalene diimides and triphenyl ethylene with vinyl bridges is reported. TEN exhibits aggregation-induced emission(AIE) behavior of a strong nearinfrared fluorescence over 700 nm and the efficiency above 60.5% in the solid state, while also shows promising application in vivo bio-imaging with good permeability and extremely low background. Single crystal of TEN reveals intra-and intermolecular C–H···O hydrogen bonds, contributing to an inclined molecular stacking along the a-axis of the cell, creating a 1 D charge carrier transporting channel under a short π-π interaction distance of 3.42 ?, which might benefit the solid emission and charge transport ability simultaneously. Solution processed bottom contact, top gate organic field effect transistors based on TEN reveal a high ambipolar charge transport ability with the hole mobility up to 0.13 cm;V;s;and electron mobility up to0.010 cm;V;s;. Further atomic force microscopy and X-ray diffraction analysis on TEN thin film confirm the existence of the1 D π-π stacking channel, suggesting the stacking geometry revealed in crystal crucial for facilitating high charge carrier mobility while preserving the strong solid emission at the same time.
引用
收藏
页码:1198 / 1207
页数:10
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