Atomic diffusion in annealed Cu/SiO2/Si(100) system prepared by magnetron sputtering

被引：0

作者：

曹博 ^{[1
,2
]}

贾艳辉 ^{[1
]}

李公平 ^{[1
]}

陈熙萌 ^{[1
]}

机构：

[1] School of Nuclear Science and Technology,Lanzhou University

[2] School of Nuclear Science and Engineering,North China Electric Power University

来源：

Chinese Physics B | 2010年 / 02期

基金：

中国国家自然科学基金;

关键词：

diffusion; interface reaction; copper silicides;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

摘要：

Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The inter-face reaction and atomic diffusion of Cu/SiO2/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si(100) is 350 C. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si (100) systems copper silicides are not formed below an annealing temperature of 350 C. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450 C.

引用

页码：392 / 395

页数：4

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